* [Detailed drawing of W1 profile (with dimensions)](/w1 profile p2.pdf). According to Neil from Micron Semiconductors, the height of the oxide is $\approx 1$ $\mu$m and the depth of the deep doping is $\approx 500$ nm.
* [Detailed drawing of W1 profile (with dimensions)](/w1 profile p2.pdf). According to Neil from Micron Semiconductors, the height of the oxide is $\approx 1$ $\mu$m and the depth
of the deep doping is $\approx 500$ nm.
* NIM paper from 2013 discussing interstrip effects in W1 detectors: [Torresi et al.](/torresi2013.pdf)
* Neil could not provide us with a detailed drawing of the S3 profile. However, he gave this description: <i>The S3 detector is a little more complicated in terms of the layer structure on the front when compared to the W1 as uses a double metal process. However, the junction implant is only a type 2 with a 0.5um depth. On top of silicon junction is metal 1 at 0.6 um, then 3.5 um of PECVD oxide to separate this from M2 which is 1.5 um where it occurs. So total of 6.1 um where metal 2 is (just fan-our areas) and 4.6 um on most of front surface. Back is the same as a W1 with 0.2 - 0.3 um metal on the 0.4 um implant layer.</i> He also informed us that the inter-spoke spacing is 100 um (with a central 40 um common p-stop between spokes).
* Neil could not provide us with a detailed drawing of the S3 profile. However, he gave this description: <i>The S3 detector is a little more complicated in terms of the layer
structure on the front when compared to the W1 as uses a double metal process. However, the junction implant is only a type 2 with a 0.5um depth. On top of silicon junction is
metal 1 at 0.6 um, then 3.5 um of PECVD oxide to separate this from M2 which is 1.5 um where it occurs. So total of 6.1 um where metal 2 is (just fan-our areas) and 4.6 um on
most of front surface. Back is the same as a W1 with 0.2 - 0.3 um metal on the 0.4 um implant layer.</i> He also informed us that the inter-spoke spacing is 100 um (with a
central 40 um common p-stop between spokes).
* Link to Microns own spec [sheets](/micron.pdf).
* **[Link to Micron's detailed spec overview](/micron.pdf)**.
The Clover detectors used at the Isolde Decay Station are of the so-called EUROBALL type.
Each detector consists of four HPGe crystals, and each crystal has a diameter of 50 mm and a length of 70 mm (see page 3 in [this document](/c39840_clover_detector_super_spec_3.pdf)).
Each detector consists of four HPGe crystals, and each crystal has a diameter of 50 mm and a length of 70 mm (see page 3
in [this document](/c39840_clover_detector_super_spec_3.pdf)).
